{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9646993","patent":{"patent_number":"US-9646993","title":"Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming","assignee":null,"inventors":[],"filing_date":"2015-08-25T00:00:00.000Z","publication_date":"2017-05-09T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":8,"abstract":"Various embodiments include field effect transistors (FETs) and related integrated circuit (IC) layouts. One FET includes: a silicon substrate including a set of trenches; a first oxide abutting the silicon substrate; a silicon germanium (SiGe) layer overlying the silicon substrate; a silicon layer overlying the SiGe layer; a second oxide overlying the silicon layer, wherein the silicon layer includes a plurality of salicide regions; a gate structure overlying the second oxide between adjacent salicide regions; and a first contact contacting the gate structure; a second contact contacting one of the salicide regions; a third oxide partially filling the set of trenches and extending above the silicon layer overlying the SiGe layer; and an air gap in each of the set of trenches, the air gap surrounded by the third oxide."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming","description":"Various embodiments include field effect transistors (FETs) and related integrated circuit (IC) layouts. One FET includes: a silicon substrate including a set of trenches; a first oxide abutting the s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9646993","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9646993","citation_suggestion":"Patentable. \"Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming\" (US-9646993). https://patentable.app/patents/US-9646993","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9646993","json":"https://patentable.app/api/llm-context/US-9646993","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:19:55.423Z"}