{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9647022","patent":{"patent_number":"US-9647022","title":"Multi-layer structure for high aspect ratio etch","assignee":null,"inventors":[],"filing_date":"2015-02-12T00:00:00.000Z","publication_date":"2017-05-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"The present disclosure relates to a method of forming a masking structure having a trench with a high aspect ratio, and an associated structure. In some embodiments, the method is performed by forming a first material over a substrate. The first material is selectively etched and a second material is formed onto the substrate at a position abutting sidewalls of the first material, resulting in a pillar of sacrificial material surrounded by a masking material. The pillar of sacrificial material is removed, resulting in a masking layer having a trench that extends into the masking material. Using the pillar of sacrificial material during formation of the trench allows the trench to have a high aspect ratio. For example, the sacrificial material allows for a plurality of masking layers to be iteratively formed to have laterally aligned openings that collectively form a trench extending through the masking layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multi-layer structure for high aspect ratio etch","description":"The present disclosure relates to a method of forming a masking structure having a trench with a high aspect ratio, and an associated structure. In some embodiments, the method is performed by forming","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9647022","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9647022","citation_suggestion":"Patentable. \"Multi-layer structure for high aspect ratio etch\" (US-9647022). https://patentable.app/patents/US-9647022","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9647022","json":"https://patentable.app/api/llm-context/US-9647022","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:18:11.982Z"}