{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9647074","patent":{"patent_number":"US-9647074","title":"Semiconductor-substrate manufacturing method and semiconductor-device manufacturing method in which germanium layer is heat-treated","assignee":null,"inventors":[],"filing_date":"2014-10-10T00:00:00.000Z","publication_date":"2017-05-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A method of manufacturing a semiconductor substrate includes: heat-treating a germanium layer 30 with an oxygen concentration of 1×1016 cm−3 or greater in a reducing gas atmosphere at 700° C. or greater. Alternatively, a method of manufacturing a semiconductor substrate includes heat-treating a germanium layer 30 having an oxygen concentration of 1×1016 cm−3 or greater in a reducing gas atmosphere so that the oxygen concentration decreases."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor-substrate manufacturing method and semiconductor-device manufacturing method in which germanium layer is heat-treated","description":"A method of manufacturing a semiconductor substrate includes: heat-treating a germanium layer 30 with an oxygen concentration of 1×1016 cm−3 or greater in a reducing gas atmosphere at 700° C. or great","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9647074","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9647074","citation_suggestion":"Patentable. \"Semiconductor-substrate manufacturing method and semiconductor-device manufacturing method in which germanium layer is heat-treated\" (US-9647074). https://patentable.app/patents/US-9647074","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9647074","json":"https://patentable.app/api/llm-context/US-9647074","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:52:57.293Z"}