{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9647083","patent":{"patent_number":"US-9647083","title":"Producing a semiconductor device by epitaxial growth","assignee":null,"inventors":[],"filing_date":"2016-04-29T00:00:00.000Z","publication_date":"2017-05-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A method of producing a semiconductor device is presented. The method comprises: providing a semiconductor substrate having a surface; epitaxially growing, along a vertical direction (Z) perpendicular to the surface, a back side emitter layer on top of the surface, wherein the back side emitter layer has dopants of a first conductivity type or dopants of a second conductivity type complementary to the first conductivity type; epitaxially growing, along the vertical direction (Z), a drift layer having dopants of the first conductivity type above the back side emitter layer, wherein a dopant concentration of the back side emitter layer is higher than a dopant concentration of the drift layer; and creating, either within or on top of the drift layer, a body region having dopants of the second conductivity type, a transition between the body region and the drift layer forming a pn-junction (Zpn). Epitaxially growing the drift layer includes creating, within the drift layer, a dopant concentration profile (P) of dopants of the first conductivity type along the vertical direction (Z), the dopant concentration profile (P) in the drift layer exhibiting a variation of a concentration of dopants of the first conductivity type along the vertical direction (Z)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Producing a semiconductor device by epitaxial growth","description":"A method of producing a semiconductor device is presented. The method comprises: providing a semiconductor substrate having a surface; epitaxially growing, along a vertical direction (Z) perpendicular","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9647083","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9647083","citation_suggestion":"Patentable. \"Producing a semiconductor device by epitaxial growth\" (US-9647083). https://patentable.app/patents/US-9647083","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9647083","json":"https://patentable.app/api/llm-context/US-9647083","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:02:12.747Z"}