{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9647111","patent":{"patent_number":"US-9647111","title":"Advanced forming method and structure of local mechanical strained transistor","assignee":null,"inventors":[],"filing_date":"2016-03-11T00:00:00.000Z","publication_date":"2017-05-09T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"Embodiments of the invention provide a semiconductor fabrication method and a structure for strained transistors. A method comprises forming a stressor layer over a MOS transistor. The stressor layer is selectively etched over the gate electrode, thereby affecting strain conditions within the MOSFET channel region. An NMOS transistor may have a tensile stressor layer, and a PMOS transistor may have compressive stressor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Advanced forming method and structure of local mechanical strained transistor","description":"Embodiments of the invention provide a semiconductor fabrication method and a structure for strained transistors. A method comprises forming a stressor layer over a MOS transistor. The stressor layer ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9647111","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9647111","citation_suggestion":"Patentable. \"Advanced forming method and structure of local mechanical strained transistor\" (US-9647111). https://patentable.app/patents/US-9647111","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9647111","json":"https://patentable.app/api/llm-context/US-9647111","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:03:50.125Z"}