{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9647115","patent":{"patent_number":"US-9647115","title":"Semiconductor structure with enhanced contact and method of manufacture the same","assignee":null,"inventors":[],"filing_date":"2015-10-14T00:00:00.000Z","publication_date":"2017-05-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of forming a semiconductor structure includes the following operations: (i) forming a fin structure on a substrate; (ii) epitaxially growing an epitaxy structure from the fin structure; (iii) forming a sacrificial structure surrounding the epitaxy structure; (iv) forming a dielectric layer covering the sacrificial structure; (v) forming an opening passing through the dielectric layer to partially expose the sacrificial structure; (vi) removing a portion of the sacrificial structure to expose a portion of the epitaxy structure; and (vii) forming a contact structure in contact with the exposed portion of the epitaxy structure. A semiconductor structure is disclosed herein as well."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure with enhanced contact and method of manufacture the same","description":"A method of forming a semiconductor structure includes the following operations: (i) forming a fin structure on a substrate; (ii) epitaxially growing an epitaxy structure from the fin structure; (iii)","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9647115","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9647115","citation_suggestion":"Patentable. \"Semiconductor structure with enhanced contact and method of manufacture the same\" (US-9647115). https://patentable.app/patents/US-9647115","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9647115","json":"https://patentable.app/api/llm-context/US-9647115","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:03:32.409Z"}