{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9647119","patent":{"patent_number":"US-9647119","title":"Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step","assignee":null,"inventors":[],"filing_date":"2016-07-05T00:00:00.000Z","publication_date":"2017-05-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A method of making a semiconductor device includes forming a first silicon germanium layer on a substrate, the first silicon germanium layer forming a portion of a first transistor; forming a second silicon germanium layer on the substrate adjacent to the first silicon germanium layer, the second silicon germanium layer forming a portion of a second transistor and having a germanium content that is different than the first silicon germanium layer and a thickness that is substantially the same; growing by an epitaxial process a compressively strained silicon germanium layer on the first silicon germanium layer, and a tensile strained silicon germanium layer on the second silicon germanium layer; patterning a first fin in the compressively strained silicon germanium layer and the first silicon germanium layer; and patterning a second fin in the tensile strained silicon germanium layer and the second silicon germanium layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step","description":"A method of making a semiconductor device includes forming a first silicon germanium layer on a substrate, the first silicon germanium layer forming a portion of a first transistor; forming a second s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9647119","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9647119","citation_suggestion":"Patentable. \"Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step\" (US-9647119). https://patentable.app/patents/US-9647119","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9647119","json":"https://patentable.app/api/llm-context/US-9647119","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:08:26.247Z"}