{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9647120","patent":{"patent_number":"US-9647120","title":"Vertical FET symmetric and asymmetric source/drain formation","assignee":null,"inventors":[],"filing_date":"2016-10-19T00:00:00.000Z","publication_date":"2017-05-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for forming features of a vertical FET device, starting with a semiconductor substrate that includes fins and a horizontal surface. The fins also have a base, a top, and sidewalls. An etch process is performed to create bottom lateral recesses at the base of the fins. The method continues with growing a bottom source/drain region in the bottom recesses which forms PN junctions, and etching the fins to form top lateral recesses at the top of the fins. The method continues with growing a top source/drain region in the top recesses of the fins, therefore forming PN junctions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical FET symmetric and asymmetric source/drain formation","description":"A method for forming features of a vertical FET device, starting with a semiconductor substrate that includes fins and a horizontal surface. The fins also have a base, a top, and sidewalls. An etch pr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9647120","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9647120","citation_suggestion":"Patentable. \"Vertical FET symmetric and asymmetric source/drain formation\" (US-9647120). https://patentable.app/patents/US-9647120","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9647120","json":"https://patentable.app/api/llm-context/US-9647120","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:19:46.160Z"}