{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9647204","patent":{"patent_number":"US-9647204","title":"Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer","assignee":null,"inventors":[],"filing_date":"2014-12-05T00:00:00.000Z","publication_date":"2017-05-09T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":15,"abstract":"Magnetic memory devices having an antiferromagnetic reference layer based on Co and Ir are provided. In one aspect, a magnetic memory device includes a reference magnetic layer having multiple Co-containing layers oriented in a stack, wherein adjacent Co-containing layers in the stack are separated by an Ir-containing layer such that the adjacent Co-containing layers in the stack are anti-parallel coupled by the Ir-containing layer therebetween; and a free magnetic layer separated from the reference magnetic layer by a barrier layer. A method of writing data to a magnetic random access memory device having at least one of the present magnetic memory cells is also provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer","description":"Magnetic memory devices having an antiferromagnetic reference layer based on Co and Ir are provided. In one aspect, a magnetic memory device includes a reference magnetic layer having multiple Co-cont","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9647204","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9647204","citation_suggestion":"Patentable. \"Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer\" (US-9647204). https://patentable.app/patents/US-9647204","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9647204","json":"https://patentable.app/api/llm-context/US-9647204","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:02:12.562Z"}