{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9651855","patent":{"patent_number":"US-9651855","title":"Methods for optical proximity correction in the design and fabrication of integrated circuits using extreme ultraviolet lithography","assignee":null,"inventors":[],"filing_date":"2015-04-14T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["G06F","H01L"],"num_claims":18,"abstract":"A method of optical proximity correction (OPC) in extreme ultraviolet lithography (EUV) lithography includes providing a patterned layout design including first and second design polygons that correspond with the pre-pattern opening, wherein the first and second design polygons are separated by a separation distance, and correcting the patterned layout design using OPC by generating (1) a third polygon that has dimensions corresponding to a combination of the first and second design polygons and the separation distance and (2) and filled polygon within the third polygon, thereby generating an OPC-corrected patterned layout design. EUV photomasks may be manufactured from the OPC-corrected patterned layout design, and integrated circuits may be fabricated using such EUV photomasks."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods for optical proximity correction in the design and fabrication of integrated circuits using extreme ultraviolet lithography","description":"A method of optical proximity correction (OPC) in extreme ultraviolet lithography (EUV) lithography includes providing a patterned layout design including first and second design polygons that corresp","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9651855","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9651855","citation_suggestion":"Patentable. \"Methods for optical proximity correction in the design and fabrication of integrated circuits using extreme ultraviolet lithography\" (US-9651855). https://patentable.app/patents/US-9651855","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9651855","json":"https://patentable.app/api/llm-context/US-9651855","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:44:14.398Z"}