{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653137","patent":{"patent_number":"US-9653137","title":"STT-MRAM bitcell for embedded flash applications","assignee":null,"inventors":[],"filing_date":"2016-04-11T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A spin transfer torque magnetic random access memory (STT-MRAM) device and a method to perform operations of an embedded eFlash device are disclosed. The STT-MRAM device is configured to include an array of STT-MRAM bitcells. The array includes a plurality of bitlines (BLs) and a plurality of word lines (WLs), where the bitlines form columns and the wordlines form rows of STT-MRAM bitcells. Each STT-MRAM bitcell includes a magnetic tunnel junction (MTJ) element coupled in series to an access transistor having a gate terminal and source and drain terminals. The array includes a plurality of source lines (SLs) coupled to the source terminals of the access transistors. A SL of the plurality of SLs is coupled to source terminals of access transistors of two or more adjacent columns of the STT-MRAM cells. The shared SL is parallel to the plurality of BLs. The operations of such a STT-MRAM bitcell are configured to include: an initialization operation, a program operation, and a sector erase operation."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"STT-MRAM bitcell for embedded flash applications","description":"A spin transfer torque magnetic random access memory (STT-MRAM) device and a method to perform operations of an embedded eFlash device are disclosed. The STT-MRAM device is configured to include an ar","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653137","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653137","citation_suggestion":"Patentable. \"STT-MRAM bitcell for embedded flash applications\" (US-9653137). https://patentable.app/patents/US-9653137","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653137","json":"https://patentable.app/api/llm-context/US-9653137","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:59:35.638Z"}