{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653153","patent":{"patent_number":"US-9653153","title":"Phase hysteretic magnetic josephson junction memory cell","assignee":null,"inventors":[],"filing_date":"2016-02-02T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":13,"abstract":"One embodiment describes a memory cell. The memory cell includes a phase hysteretic magnetic Josephson junction (PHMJJ) that is configured to store one of a first binary logic state corresponding to a binary logic-1 state and a second binary logic state corresponding to a binary logic-0 state in response to a write current that is provided to the memory cell and to generate a superconducting phase based on the stored digital state. The memory cell also includes a superconducting read-select device that is configured to implement a read operation in response to a read current that is provided to the memory cell. The memory cell further includes at least one Josephson junction configured to provide an output based on the superconducting phase of the PHMJJ during the read operation, the output corresponding to the stored digital state."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Phase hysteretic magnetic josephson junction memory cell","description":"One embodiment describes a memory cell. The memory cell includes a phase hysteretic magnetic Josephson junction (PHMJJ) that is configured to store one of a first binary logic state corresponding to a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653153","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653153","citation_suggestion":"Patentable. \"Phase hysteretic magnetic josephson junction memory cell\" (US-9653153). https://patentable.app/patents/US-9653153","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653153","json":"https://patentable.app/api/llm-context/US-9653153","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:47:01.223Z"}