{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653163","patent":{"patent_number":"US-9653163","title":"Memory cell with non-volatile data storage","assignee":null,"inventors":[],"filing_date":"2014-04-15T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":15,"abstract":"The invention concerns a memory cell comprising first and second resistive elements (202, 204) coupled respectively between first and second storage nodes and first and second intermediate nodes, at least one of them being programmable to take up one of at least two resistive states (Rmin′ Rmax); a third transistor (220) coupled between the first and second intermediate nodes; a fourth transistor (502) coupled between the first storage node (206, 210) and a data input node (506); and a control circuit arranged, during a write phase, to activate the third and fourth transistors and to couple the data input node to a second supply voltage (VDD, GND) via a first circuit block (508) in order to generate a current in a first direction through the first and second resistive elements in order to program the resistive state of at least one of the elements."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory cell with non-volatile data storage","description":"The invention concerns a memory cell comprising first and second resistive elements (202, 204) coupled respectively between first and second storage nodes and first and second intermediate nodes, at l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653163","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653163","citation_suggestion":"Patentable. \"Memory cell with non-volatile data storage\" (US-9653163). https://patentable.app/patents/US-9653163","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653163","json":"https://patentable.app/api/llm-context/US-9653163","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:07:23.812Z"}