{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653173","patent":{"patent_number":"US-9653173","title":"Memory cell with different program and read paths for achieving high endurance","assignee":null,"inventors":[],"filing_date":"2016-12-04T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","H01L"],"num_claims":25,"abstract":"A memory cell includes a coupling device, a read transistor, a first read selection transistor, a second read selection transistor, an erase device, a program transistor, and a program selection transistor. The coupling device is formed on a first doped region. The erase device is formed on a second doped region. The read transistor, the first read selection transistor, the second read selection transistor, the program transistor, and the program selection transistor are formed on a third doped region. A gate terminal of the coupling device is coupled to a common floating gate. A gate terminal of the erase device is coupled to the floating gate. During a program operation, electrical charges are moved from the common floating gate. During an erase operation, electrical charges are ejected from the common floating gate to the erase device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory cell with different program and read paths for achieving high endurance","description":"A memory cell includes a coupling device, a read transistor, a first read selection transistor, a second read selection transistor, an erase device, a program transistor, and a program selection trans","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653173","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653173","citation_suggestion":"Patentable. \"Memory cell with different program and read paths for achieving high endurance\" (US-9653173). https://patentable.app/patents/US-9653173","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653173","json":"https://patentable.app/api/llm-context/US-9653173","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:00:57.931Z"}