{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653286","patent":{"patent_number":"US-9653286","title":"Gallium nitride nanowire based electronics","assignee":null,"inventors":[],"filing_date":"2013-02-12T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L","B82Y","B82Y","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"GaN based nanowires are used to grow high quality, discreet base elements with c-plane top surface for fabrication of various semiconductor devices, such as diodes and transistors for power electronics."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Gallium nitride nanowire based electronics","description":"GaN based nanowires are used to grow high quality, discreet base elements with c-plane top surface for fabrication of various semiconductor devices, such as diodes and transistors for power electronic","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653286","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653286","citation_suggestion":"Patentable. \"Gallium nitride nanowire based electronics\" (US-9653286). https://patentable.app/patents/US-9653286","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653286","json":"https://patentable.app/api/llm-context/US-9653286","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:14:49.686Z"}