{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653287","patent":{"patent_number":"US-9653287","title":"S/D connection to individual channel layers in a nanosheet FET","assignee":null,"inventors":[],"filing_date":"2015-10-21T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":16,"abstract":"A field effect transistor (FET) and a method to form the FET are disclosed. The FET comprises a channel region comprising a nanosheet layer/sacrificial layer stack. The stack comprises at least one nanosheet layer/sacrificial layer pair. Each nanosheet layer/sacrificial layer pair comprises an end surface. A conductive material layer is formed on the end surface of the pairs, and a source/drain contact is formed on the conductive material layer. In one embodiment, the sacrificial layer of at least one pair further may comprise a low-k dielectric material proximate to the end surface of the pair. A surface of the low-k dielectric material proximate to the end surface of the pair is in substantial alignment with the end surface of the nanosheet layer. Alternatively, the surface of the low-k dielectric material proximate to the end surface of the pair is recessed with respect to the end surface of the nanosheet layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"S/D connection to individual channel layers in a nanosheet FET","description":"A field effect transistor (FET) and a method to form the FET are disclosed. The FET comprises a channel region comprising a nanosheet layer/sacrificial layer stack. The stack comprises at least one na","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653287","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653287","citation_suggestion":"Patentable. \"S/D connection to individual channel layers in a nanosheet FET\" (US-9653287). https://patentable.app/patents/US-9653287","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653287","json":"https://patentable.app/api/llm-context/US-9653287","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:03:22.203Z"}