{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653303","patent":{"patent_number":"US-9653303","title":"Method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-10-30T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"In one embodiment, a method of manufacturing a semiconductor device includes forming a structure in which first to N-th insulating layers and first to N-th metal layers are alternately provided on a substrate where N is an integer of two or more. The method further includes processing the first insulating layer. The method further includes forming a first film on a side face of the first insulating layer, the first film containing a first reaction product generated by processing the first insulating layer. The method further includes processing the first metal layer under the first insulating layer, and the second insulating layer under the first metal layer by using the first film as a mask."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device","description":"In one embodiment, a method of manufacturing a semiconductor device includes forming a structure in which first to N-th insulating layers and first to N-th metal layers are alternately provided on a s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653303","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653303","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device\" (US-9653303). https://patentable.app/patents/US-9653303","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653303","json":"https://patentable.app/api/llm-context/US-9653303","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:03:27.414Z"}