{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653318","patent":{"patent_number":"US-9653318","title":"Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition","assignee":null,"inventors":[],"filing_date":"2016-01-26T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Methods for processing a substrate are described herein. Methods can include positioning a substrate with an exposed surface comprising a silicon oxide layer in a processing chamber, biasing the substrate, treating the substrate to roughen a portion of the silicon oxide layer, heating the substrate to a first temperature, exposing the exposed surface of the substrate to ammonium fluoride to form one or more volatile products while maintaining the first temperature, and heating the substrate to a second temperature, which is higher than the first temperature, to sublimate the volatile products."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition","description":"Methods for processing a substrate are described herein. Methods can include positioning a substrate with an exposed surface comprising a silicon oxide layer in a processing chamber, biasing the subst","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653318","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653318","citation_suggestion":"Patentable. \"Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition\" (US-9653318). https://patentable.app/patents/US-9653318","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653318","json":"https://patentable.app/api/llm-context/US-9653318","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:19:26.078Z"}