{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653345","patent":{"patent_number":"US-9653345","title":"Method of fabricating semiconductor structure with improved critical dimension control","assignee":null,"inventors":[],"filing_date":"2016-01-07T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A method of fabricating a semiconductor structure for improving critical dimension control is provided in the present invention. The method includes the following steps. An inter metal dielectric (IMD) layer is formed on a semiconductor substrate, a patterned hard mask layer is formed on the IMD layer, and a first aperture is formed in the IMD layer. A first barrier layer is formed on the patterned hard mask layer and a surface of the first aperture, a first patterned resist is formed on the first barrier layer, and an etching process is performed to form a second aperture in the IMD layer by using the first patterned resist as a mask. The first patterned resist is kept from being poisoned because of the first barrier layer, and the critical dimension control of the semiconductor structure may be improved accordingly."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of fabricating semiconductor structure with improved critical dimension control","description":"A method of fabricating a semiconductor structure for improving critical dimension control is provided in the present invention. The method includes the following steps. An inter metal dielectric (IMD","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653345","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653345","citation_suggestion":"Patentable. \"Method of fabricating semiconductor structure with improved critical dimension control\" (US-9653345). https://patentable.app/patents/US-9653345","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653345","json":"https://patentable.app/api/llm-context/US-9653345","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:15:31.237Z"}