{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653346","patent":{"patent_number":"US-9653346","title":"Integrated FinFET structure having a contact plug pitch larger than fin and first metal pitch","assignee":null,"inventors":[],"filing_date":"2015-07-16T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"An integrated circuits structure includes a semiconductor substrate, at least an non-planar field effect transistor (FET) device formed on the semiconductor substrate, and an interconnection structure formed on the semiconductor substrate. The non-planar FET device includes a plurality of fins and a gate electrode. The interconnection structure includes a plurality of first group metals and a plurality of second group metals. The first group metals are formed on the non-planar FET and the second group metals are formed on the first group metals. The first group metals include a first metal pitch and the second group metals include a second metal pitch. The second metal pitch is 1.2-1.5 times to the first metal pitch."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated FinFET structure having a contact plug pitch larger than fin and first metal pitch","description":"An integrated circuits structure includes a semiconductor substrate, at least an non-planar field effect transistor (FET) device formed on the semiconductor substrate, and an interconnection structure","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653346","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653346","citation_suggestion":"Patentable. \"Integrated FinFET structure having a contact plug pitch larger than fin and first metal pitch\" (US-9653346). https://patentable.app/patents/US-9653346","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653346","json":"https://patentable.app/api/llm-context/US-9653346","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:22:55.788Z"}