{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653351","patent":{"patent_number":"US-9653351","title":"Method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-09-22T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A method of manufacturing a semiconductor device may include: (a) loading a substrate into a process chamber, the substrate having: a process surface provided with a first metal film containing at least a first metal element; (b) forming a second metal film on the substrate loaded in the process chamber by alternately supplying a metal compound and a first reactive gas reactive with the metal compound to the substrate a plurality of times; (c) alternately performing steps (c-1) and (c-2) a plurality of times wherein the step (c-1) includes: forming an amorphous third metal film on the second metal film, and the step (c-2) includes: forming a fourth metal film on the third metal film; and (d) forming an amorphous fifth metal film on the fourth metal film by supplying the metal compound mixed with the second reactive gas to the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device","description":"A method of manufacturing a semiconductor device may include: (a) loading a substrate into a process chamber, the substrate having: a process surface provided with a first metal film containing at lea","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653351","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653351","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device\" (US-9653351). https://patentable.app/patents/US-9653351","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653351","json":"https://patentable.app/api/llm-context/US-9653351","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:24:47.744Z"}