{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653356","patent":{"patent_number":"US-9653356","title":"Methods of forming self-aligned device level contact structures","assignee":null,"inventors":[],"filing_date":"2015-08-10T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"One illustrative method disclosed includes, among other things, forming a silicon dioxide etch stop layer on and in contact with a source/drain region and adjacent silicon nitride sidewall spacers positioned on two laterally spaced-apart transistors having silicon dioxide gate cap layers, performing a first etching process through an opening in a layer of insulating material to remove the silicon nitride material positioned above the source/drain region, performing a second etching process to remove a portion of the silicon dioxide etch stop layer and thereby expose a portion of the source/drain region, and forming a conductive self-aligned contact that is conductively coupled to the source/drain region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming self-aligned device level contact structures","description":"One illustrative method disclosed includes, among other things, forming a silicon dioxide etch stop layer on and in contact with a source/drain region and adjacent silicon nitride sidewall spacers pos","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653356","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653356","citation_suggestion":"Patentable. \"Methods of forming self-aligned device level contact structures\" (US-9653356). https://patentable.app/patents/US-9653356","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653356","json":"https://patentable.app/api/llm-context/US-9653356","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:21:20.645Z"}