{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653364","patent":{"patent_number":"US-9653364","title":"FinFET device and method of forming the same","assignee":null,"inventors":[],"filing_date":"2016-01-08T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"Provided is a FinFET device including a substrate having at least one fin, first and second gate stacks, first and second strained layers, first and second dielectric layers, and first and second connectors. The first and second gate stacks are across the fin. The first and second strained layers are respectively aside the first and second gate stacks. The first and second dielectric layer are respectively over the first and second strained layers, and the top surface of the first dielectric layer is lower than the top surface of the second dielectric layer. The first connector is through the first dielectric layer and is electrically connected to the first strained layer. The second connector is through the second dielectric layer and is electrically connected to the second strained layer. Besides, the width of the second connector is greater than the width of the first connector."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET device and method of forming the same","description":"Provided is a FinFET device including a substrate having at least one fin, first and second gate stacks, first and second strained layers, first and second dielectric layers, and first and second conn","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653364","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653364","citation_suggestion":"Patentable. \"FinFET device and method of forming the same\" (US-9653364). https://patentable.app/patents/US-9653364","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653364","json":"https://patentable.app/api/llm-context/US-9653364","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:08:38.654Z"}