{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653371","patent":{"patent_number":"US-9653371","title":"Underfill material and method for manufacturing semiconductor device using the same","assignee":null,"inventors":[],"filing_date":"2014-09-10T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":5,"abstract":"An underfill material enabling voidless packaging and excellent solder bonding properties, and a method for manufacturing a semiconductor device using the same are provided. An underfill material is used which contains an epoxy resin and a curing agent, and a time for a reaction rate to reach 20% at 240° C. calculated by Ozawa method using a differential scanning calorimeter is 2.0 sec or less and a time for the reaction rate to reach 60% is 3.0 sec or more. This enables voidless packaging and excellent solder connection properties."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Underfill material and method for manufacturing semiconductor device using the same","description":"An underfill material enabling voidless packaging and excellent solder bonding properties, and a method for manufacturing a semiconductor device using the same are provided. An underfill material is u","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653371","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653371","citation_suggestion":"Patentable. \"Underfill material and method for manufacturing semiconductor device using the same\" (US-9653371). https://patentable.app/patents/US-9653371","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653371","json":"https://patentable.app/api/llm-context/US-9653371","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:17:05.022Z"}