{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653462","patent":{"patent_number":"US-9653462","title":"Semiconductor device and method for fabricating the same","assignee":null,"inventors":[],"filing_date":"2014-12-26T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a fin type active pattern extended in a first direction and disposed on a substrate. A first gate electrode and a second gate electrode are disposed on the fin type active pattern. The first gate electrode and the second gate electrode are extended in a second direction crossing the first direction. A trench region is disposed in the fin type active pattern and between the first gate electrode and the second gate electrode. A source/drain region is disposed on a surface of the trench region. A source/drain contact is disposed on the source/drain region. The source/drain contact includes a first insulating layer disposed on the source/drain region and a metal oxide layer disposed on the first insulating layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for fabricating the same","description":"A semiconductor device includes a fin type active pattern extended in a first direction and disposed on a substrate. A first gate electrode and a second gate electrode are disposed on the fin type act","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653462","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653462","citation_suggestion":"Patentable. \"Semiconductor device and method for fabricating the same\" (US-9653462). https://patentable.app/patents/US-9653462","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653462","json":"https://patentable.app/api/llm-context/US-9653462","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:41:39.563Z"}