{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653464","patent":{"patent_number":"US-9653464","title":"Asymmetric band gap junctions in narrow band gap MOSFET","assignee":null,"inventors":[],"filing_date":"2016-09-14T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":10,"abstract":"A method for forming a semiconductor device, including forming one or more fin structures on a semiconductor substrate, where the fin structure defines source and drain regions. The method includes forming a gate stack, depositing a first contact insulator layer, and applying an etching process to portions of the first insulator layer to form a trench that extends to the source region. The method also includes depositing an epitaxial lower band gap source material into the trench and extending to the source region, depositing a second insulator layer, applying a second etching process to portions of the second insulator layer to form a trench that extends to the source and drain regions, and depositing a metalizing material over the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Asymmetric band gap junctions in narrow band gap MOSFET","description":"A method for forming a semiconductor device, including forming one or more fin structures on a semiconductor substrate, where the fin structure defines source and drain regions. The method includes fo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653464","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653464","citation_suggestion":"Patentable. \"Asymmetric band gap junctions in narrow band gap MOSFET\" (US-9653464). https://patentable.app/patents/US-9653464","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653464","json":"https://patentable.app/api/llm-context/US-9653464","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:18:14.456Z"}