{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653465","patent":{"patent_number":"US-9653465","title":"Vertical transistors having different gate lengths","assignee":null,"inventors":[],"filing_date":"2016-09-12T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A method of forming a semiconductor device and resulting structures having vertical transistors with different gate lengths are provided. A sacrificial gate is formed over a channel region of a semiconductor fin. The sacrificial gate includes a first material. The first material in a first portion of the sacrificial gate adjacent to the semiconductor fin is converted to a second material, the first portion having a first depth. The first portion of the sacrificial gate is then removed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical transistors having different gate lengths","description":"A method of forming a semiconductor device and resulting structures having vertical transistors with different gate lengths are provided. A sacrificial gate is formed over a channel region of a semico","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653465","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653465","citation_suggestion":"Patentable. \"Vertical transistors having different gate lengths\" (US-9653465). https://patentable.app/patents/US-9653465","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653465","json":"https://patentable.app/api/llm-context/US-9653465","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:22:14.135Z"}