{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653476","patent":{"patent_number":"US-9653476","title":"On-SOI integrated circuit comprising a lateral diode for protection against electrostatic discharges","assignee":null,"inventors":[],"filing_date":"2013-07-02T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":17,"abstract":"An integrated circuit includes a transistor, an UTBOX buried insulating layer disposed under it and a ground plane disposed under the layer. A well is disposed under the plane and a first trench is at the periphery of the transistor and extends through the layer into the well. There is a substrate under the well and a p-n diode on a side of the transistor. The diode comprises first and second zones of opposite doping and the first zone is configured for electrical connection to a first electrode of the transistor. The first and second zones are coplanar with the plane and a second trench for separating the first and second zones. The second trench extends through the layer into the plane to a depth less than an interface between the plane and the well. There is a third zone under the second trench forming a junction between the zones."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"On-SOI integrated circuit comprising a lateral diode for protection against electrostatic discharges","description":"An integrated circuit includes a transistor, an UTBOX buried insulating layer disposed under it and a ground plane disposed under the layer. A well is disposed under the plane and a first trench is at","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653476","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653476","citation_suggestion":"Patentable. \"On-SOI integrated circuit comprising a lateral diode for protection against electrostatic discharges\" (US-9653476). https://patentable.app/patents/US-9653476","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653476","json":"https://patentable.app/api/llm-context/US-9653476","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:09:09.645Z"}