{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653477","patent":{"patent_number":"US-9653477","title":"Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming","assignee":null,"inventors":[],"filing_date":"2014-01-03T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":14,"abstract":"Various embodiments include field effect transistors (FETs) and methods of forming such FETs. One method includes: forming a first set of openings in a precursor structure having: a silicon substrate having a crystal direction, the silicon substrate substantially abutted by a first oxide; a silicon germanium (SiGe) layer overlying the silicon substrate; a silicon layer overlying the SiGe layer; a second oxide overlying the silicon layer; and a sacrificial layer overlying the second oxide, wherein the first set of openings each expose the silicon substrate; undercut etching the silicon substrate in a direction perpendicular to the crystal direction of the silicon substrate to form a trench corresponding with each of the first set of openings; passivating exposed surfaces of at least one of the SiGe layer or the silicon layer in the first set of openings; and at least partially filling each trench with a dielectric."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming","description":"Various embodiments include field effect transistors (FETs) and methods of forming such FETs. One method includes: forming a first set of openings in a precursor structure having: a silicon substrate ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653477","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653477","citation_suggestion":"Patentable. \"Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming\" (US-9653477). https://patentable.app/patents/US-9653477","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653477","json":"https://patentable.app/api/llm-context/US-9653477","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:29:17.149Z"}