{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653545","patent":{"patent_number":"US-9653545","title":"MOSFET structure with T-shaped epitaxial silicon channel","assignee":null,"inventors":[],"filing_date":"2015-03-18T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A MOSFET disposed between shallow trench isolation (STI) structures includes an epitaxial silicon layer formed over a substrate surface and extending over inwardly extending ledges of the STI structures. The gate width of the MOSFET is therefore the width of the epitaxial silicon layer and greater than the width of the original substrate surface between the STI structures. The epitaxial silicon layer is formed over the previously doped channel and is undoped upon deposition. A thermal activation operation may be used to drive dopant impurities into the transistor channel region occupied by the epitaxial silicon layer but the dopant concentration at the channel location where the epitaxial silicon layer intersects with the gate dielectric, is minimized."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"MOSFET structure with T-shaped epitaxial silicon channel","description":"A MOSFET disposed between shallow trench isolation (STI) structures includes an epitaxial silicon layer formed over a substrate surface and extending over inwardly extending ledges of the STI structur","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653545","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653545","citation_suggestion":"Patentable. \"MOSFET structure with T-shaped epitaxial silicon channel\" (US-9653545). https://patentable.app/patents/US-9653545","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653545","json":"https://patentable.app/api/llm-context/US-9653545","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:14:13.183Z"}