{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653567","patent":{"patent_number":"US-9653567","title":"Lateral bipolar transistor","assignee":null,"inventors":[],"filing_date":"2016-07-18T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"A bipolar junction transistor comprises a semiconductor layer disposed on an insulating material, at least a portion of the semiconductor layer forming a base region. The bipolar junction transistor further comprises a transistor emitter laterally disposed on a first side of the base region, where in the transistor emitter is a first doping type and has a first width, and wherein the first width is a lithographic feature size. The bipolar junction transistor further comprises a transistor collector laterally disposed on a second side of the base region, wherein the transistor collector is the first doping type and the first width. The bipolar junction transistor further comprises a central base contact laterally disposed on the base region between the transistor emitter and the transistor collector, wherein the central base contact is a second doping type and has a second width, and wherein the second width is a sub-lithographic feature size."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Lateral bipolar transistor","description":"A bipolar junction transistor comprises a semiconductor layer disposed on an insulating material, at least a portion of the semiconductor layer forming a base region. The bipolar junction transistor f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653567","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653567","citation_suggestion":"Patentable. \"Lateral bipolar transistor\" (US-9653567). https://patentable.app/patents/US-9653567","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653567","json":"https://patentable.app/api/llm-context/US-9653567","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:18:14.821Z"}