{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653577","patent":{"patent_number":"US-9653577","title":"Diluted drift layer with variable stripe widths for power transistors","assignee":null,"inventors":[],"filing_date":"2016-07-27T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":5,"abstract":"A multi-finger lateral high voltage transistors (MFLHVT) includes a substrate doped a first dopant type, a well doped a second dopant type, and a buried drift layer (BDL) doped first type having a diluted BDL portion (DBDL) including dilution stripes. A semiconductor surface doped the second type is on the BDL. Dielectric isolation regions have gaps defining a first active area in a first gap region (first MOAT) and a second active area in a second gap region (second MOAT). A drain includes drain fingers in the second MOAT interdigitated with source fingers in the first MOAT each doped second type. The DBDL is within a fingertip drift region associated drain fingertips and/or source fingertips between the first and second MOAT. A gate stack is on the semiconductor surface between source and drain. The dilution stripes have stripe widths that increase monotonically with a drift length at their respective positions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Diluted drift layer with variable stripe widths for power transistors","description":"A multi-finger lateral high voltage transistors (MFLHVT) includes a substrate doped a first dopant type, a well doped a second dopant type, and a buried drift layer (BDL) doped first type having a dil","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653577","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653577","citation_suggestion":"Patentable. \"Diluted drift layer with variable stripe widths for power transistors\" (US-9653577). https://patentable.app/patents/US-9653577","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653577","json":"https://patentable.app/api/llm-context/US-9653577","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:46:03.356Z"}