{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653583","patent":{"patent_number":"US-9653583","title":"Methods of forming diffusion breaks on integrated circuit products comprised of finFET devices","assignee":null,"inventors":[],"filing_date":"2016-08-02T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":25,"abstract":"One illustrative method disclosed herein includes, among other things, forming a first gate structure above a fin, forming epi semiconductor material on the fin, performing at least one first etching process through a patterned sacrificial layer of material to remove at least a gate cap layer and sacrificial gate materials of the first gate structure so as to define a first isolation cavity that exposes the fin while leaving the second gate structure intact, performing at least one second etching process through the first isolation cavity to remove at least a portion of a vertical height of the fin and thereby form a first isolation trench, removing the patterned sacrificial layer of material, and forming a layer of insulating material above the epi semiconductor material and in the first isolation trench and in the first isolation cavity."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming diffusion breaks on integrated circuit products comprised of finFET devices","description":"One illustrative method disclosed herein includes, among other things, forming a first gate structure above a fin, forming epi semiconductor material on the fin, performing at least one first etching ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653583","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653583","citation_suggestion":"Patentable. \"Methods of forming diffusion breaks on integrated circuit products comprised of finFET devices\" (US-9653583). https://patentable.app/patents/US-9653583","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653583","json":"https://patentable.app/api/llm-context/US-9653583","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:15:31.377Z"}