{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653588","patent":{"patent_number":"US-9653588","title":"GaN substrate, semiconductor device and method for fabricating GaN substrate and semiconductor device","assignee":null,"inventors":[],"filing_date":"2014-08-22T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"A gallium nitride (GaN) substrate, a semiconductor device, and methods for fabricating a GaN substrate and a semiconductor device are provided. The GaN substrate includes: a GaN base; an aluminum gallium nitride (AlGaN) layer, disposed on the GaN base; and a p-type conducting layer disposed on an active area of the AlGaN layer, and used to exhaust surface state negative electrons on the AlGaN layer and neutralize a dangling bond on the AlGaN layer. The p-type conducting layer is formed on the AlGaN layer, and a hole charge carrier in the p-type conducting layer can be used to exhaust the surface state negative electrons on an n-type AlGaN layer, neutralize the dangling bond on a section of the AlGaN layer, and prevent the forming of a virtual gate, so as to suppress a current collapse effect of the semiconductor device fabricated using the GaN substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"GaN substrate, semiconductor device and method for fabricating GaN substrate and semiconductor device","description":"A gallium nitride (GaN) substrate, a semiconductor device, and methods for fabricating a GaN substrate and a semiconductor device are provided. The GaN substrate includes: a GaN base; an aluminum gall","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653588","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653588","citation_suggestion":"Patentable. \"GaN substrate, semiconductor device and method for fabricating GaN substrate and semiconductor device\" (US-9653588). https://patentable.app/patents/US-9653588","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653588","json":"https://patentable.app/api/llm-context/US-9653588","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:45:46.388Z"}