{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653589","patent":{"patent_number":"US-9653589","title":"Semiconductor multi-layer substrate, semiconductor device, and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2014-09-10T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":38,"abstract":"A semiconductor multi-layer substrate includes a substrate made of Si and a multi-layer semiconductor layer. The multi-layer semiconductor layer includes an active layer made of a nitride semiconductor, a first warp control layer being formed between the substrate and the active layer and giving a predetermined warp to the substrate, and a second warp control layer made of a nitride semiconductor of which amount of an increase in a warp per a unit thickness is smaller than an amount of increase in the warp per a unit thickness of the first warp control layer. A total thickness of the multi-layer semiconductor layer is equal to or larger than 4 μm."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor multi-layer substrate, semiconductor device, and method for manufacturing the same","description":"A semiconductor multi-layer substrate includes a substrate made of Si and a multi-layer semiconductor layer. The multi-layer semiconductor layer includes an active layer made of a nitride semiconducto","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653589","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653589","citation_suggestion":"Patentable. \"Semiconductor multi-layer substrate, semiconductor device, and method for manufacturing the same\" (US-9653589). https://patentable.app/patents/US-9653589","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653589","json":"https://patentable.app/api/llm-context/US-9653589","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:00:18.529Z"}