{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9653595","patent":{"patent_number":"US-9653595","title":"Semiconductor device and semiconductor device fabrication method","assignee":null,"inventors":[],"filing_date":"2014-09-10T00:00:00.000Z","publication_date":"2017-05-16T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":7,"abstract":"An n− drift layer is a parallel pn layer having an n-type region and a p-type region are alternately arranged in the direction parallel to the main surface so as to come into contact with each other, and have a width in a direction parallel to the main surface of the substrate which is less than a length in a direction perpendicular to the main surface of the substrate. A second-main-surface-side lower end portion of the p-type region has a structure in which a high-concentration lower end portion and a low-concentration lower end portion of a p-type low-concentration region are repeated at a predetermined pitch in the direction parallel to the main surface of the substrate. It is possible to provide a super junction MOS semiconductor device which can improve a trade-off relationship between turn-off loss and turn-off dv/dt and improve avalanche resistance."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and semiconductor device fabrication method","description":"An n− drift layer is a parallel pn layer having an n-type region and a p-type region are alternately arranged in the direction parallel to the main surface so as to come into contact with each other, ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9653595","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9653595","citation_suggestion":"Patentable. \"Semiconductor device and semiconductor device fabrication method\" (US-9653595). https://patentable.app/patents/US-9653595","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9653595","json":"https://patentable.app/api/llm-context/US-9653595","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:12:05.246Z"}