{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9657410","patent":{"patent_number":"US-9657410","title":"Method for producing Ga2O3 based crystal film","assignee":null,"inventors":[],"filing_date":"2012-11-27T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A Ga2O3 crystal film is epitaxially grown on a Ga2O3 crystal substrate using an MBE method, while controlling the n-type conductivity with high accuracy. Provided is a method for producing a Ga2O3 crystal film, wherein a conductive Ga2O3 crystal film is formed by epitaxial growth using an MBE method. This method for producing a Ga2O3 crystal film comprises a step wherein a Ga2O3 single crystal film containing Sn is grown by producing a Ga vapor and an Sn vapor and supplying the Ga vapor and the Sn vapor to the surface of a Ga2O3 crystal substrate as molecular beams. The Sn vapor is produced by heating Sn oxide that is filled in a cell of an MBE apparatus."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing Ga2O3 based crystal film","description":"A Ga2O3 crystal film is epitaxially grown on a Ga2O3 crystal substrate using an MBE method, while controlling the n-type conductivity with high accuracy. Provided is a method for producing a Ga2O3 cry","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9657410","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9657410","citation_suggestion":"Patentable. \"Method for producing Ga2O3 based crystal film\" (US-9657410). https://patentable.app/patents/US-9657410","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9657410","json":"https://patentable.app/api/llm-context/US-9657410","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:18:35.344Z"}