{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9658278","patent":{"patent_number":"US-9658278","title":"Method and apparatus for high voltage device crystal defect detection","assignee":null,"inventors":[],"filing_date":"2014-01-24T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device comprises a first layer, a second layer configured to overlap with the first layer at a plurality of positions, a plurality of first layer contacts configured to be selectively activated to test the first layer for a first layer leakage current, and a plurality of second layer contacts configured to be selectively activated to test the second layer for a second layer leakage current. The first layer contacts are arranged on the first layer on a first side and a second side of the plurality of positions at which the second layer overlaps with the first layer. The second layer contacts are arranged on the second layer on a third side and a fourth side of the plurality of positions at which the second layer overlaps with the first layer. A determined first layer leakage current or second layer leakage current is indicative of the presence of a crystal defect in the semiconductor device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method and apparatus for high voltage device crystal defect detection","description":"A semiconductor device comprises a first layer, a second layer configured to overlap with the first layer at a plurality of positions, a plurality of first layer contacts configured to be selectively ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9658278","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9658278","citation_suggestion":"Patentable. \"Method and apparatus for high voltage device crystal defect detection\" (US-9658278). https://patentable.app/patents/US-9658278","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9658278","json":"https://patentable.app/api/llm-context/US-9658278","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:37:59.774Z"}