{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9659126","patent":{"patent_number":"US-9659126","title":"Modeling pattern dependent effects for a 3-D virtual semiconductor fabrication environment","assignee":null,"inventors":[],"filing_date":"2015-01-26T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["G05B","G06F","G06F"],"num_claims":28,"abstract":"Improving semiconductor device fabrication by enabling the identification and modeling of pattern dependent effects of fabrication processes is discussed. In one embodiment a local mask is generated from a 3-D model of a semiconductor device structure that was created in a 3-D virtual semiconductor fabrication environment from 2-D design layout data and a fabrication process sequence. The local mask is combined with a global mask based on the original design layout data to create a combined mask. The combined mask is convolved with at least one proximity function to generate a loading map which may be used to modify the behavior of one or more processes in the process sequence. This behavior modification enables the 3-D virtual semiconductor fabrication environment to deliver more accurate 3-D models that better predict the 3-D device structure when performing the virtual semiconductor device fabrication that serves as a prelude to physical fabrication."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Modeling pattern dependent effects for a 3-D virtual semiconductor fabrication environment","description":"Improving semiconductor device fabrication by enabling the identification and modeling of pattern dependent effects of fabrication processes is discussed. In one embodiment a local mask is generated f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9659126","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9659126","citation_suggestion":"Patentable. \"Modeling pattern dependent effects for a 3-D virtual semiconductor fabrication environment\" (US-9659126). https://patentable.app/patents/US-9659126","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9659126","json":"https://patentable.app/api/llm-context/US-9659126","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:39:53.564Z"}