{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9659623","patent":{"patent_number":"US-9659623","title":"Memory having a plurality of resistive non-volatile memory cells","assignee":null,"inventors":[],"filing_date":"2016-03-28T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A resistive non-volatile memory (NVMN) cell has three select transistors connected together in series. A first resistive element has a first terminal connected between first and second select transistors and a second terminal. A second resistive element has a first terminal connected between second and third transistors. In a first embodiment, the second terminals of the first and second resistive elements are connected to bit lines. In a second embodiment, the second terminals of the first and second resistive elements are connected to source lines. In the first embodiment, when the center select transistor is conductive, the first and second resistive elements become a resistor-divider. Each of the first and second resistive elements include a magnetic tunnel junction (MTJ)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory having a plurality of resistive non-volatile memory cells","description":"A resistive non-volatile memory (NVMN) cell has three select transistors connected together in series. A first resistive element has a first terminal connected between first and second select transist","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9659623","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9659623","citation_suggestion":"Patentable. \"Memory having a plurality of resistive non-volatile memory cells\" (US-9659623). https://patentable.app/patents/US-9659623","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9659623","json":"https://patentable.app/api/llm-context/US-9659623","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:22:42.212Z"}