{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9659649","patent":{"patent_number":"US-9659649","title":"Semiconductor storage device and driving method thereof","assignee":null,"inventors":[],"filing_date":"2016-03-01T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":17,"abstract":"A memory includes first signal-lines, second signal-lines and resistance-change memory cells. First and second drivers can supply power to the first and second signal-lines, respectively. The second driver increases a voltage of a selected second signal-line in a write-loop higher than that in a previous write-loop. The write-loop includes a write operation and a verify operation. A voltage increase width of the selected second signal-line at a time of transition from a first write-loop to a second write-loop is larger than a voltage increase width of the selected second signal-line at a time of transition from the second write-loop to a third write-loop. A voltage increase width of the selected second signal-line at a time of transition from the second write-loop to the third write-loop is smaller than a voltage increase width of the selected second signal-line at a time of transition from the third write-loop to a forth write-loop."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor storage device and driving method thereof","description":"A memory includes first signal-lines, second signal-lines and resistance-change memory cells. First and second drivers can supply power to the first and second signal-lines, respectively. The second d","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9659649","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9659649","citation_suggestion":"Patentable. \"Semiconductor storage device and driving method thereof\" (US-9659649). https://patentable.app/patents/US-9659649","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9659649","json":"https://patentable.app/api/llm-context/US-9659649","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:30:35.561Z"}