{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9659787","patent":{"patent_number":"US-9659787","title":"High-purity 2-fluorobutane","assignee":null,"inventors":[],"filing_date":"2014-03-06T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":3,"abstract":"The present invention is a high-purity 2-fluorobutane having a purity of 99.9 vol % or more and a butene content of 1,000 ppm by volume or less, and a method for using the high-purity 2-fluorobutane as a dry etching gas. According to the present invention, a high-purity 2-fluorobutane that is suitable as a plasma reaction gas for semiconductors is provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High-purity 2-fluorobutane","description":"The present invention is a high-purity 2-fluorobutane having a purity of 99.9 vol % or more and a butene content of 1,000 ppm by volume or less, and a method for using the high-purity 2-fluorobutane a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9659787","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9659787","citation_suggestion":"Patentable. \"High-purity 2-fluorobutane\" (US-9659787). https://patentable.app/patents/US-9659787","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9659787","json":"https://patentable.app/api/llm-context/US-9659787","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:33:47.726Z"}