{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9659790","patent":{"patent_number":"US-9659790","title":"Method of forming pattern and method of manufacturing integrated circuit device by using the same","assignee":null,"inventors":[],"filing_date":"2016-05-11T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of forming a pattern, the method including forming a mask layer on a feature layer on a substrate; forming guides regularly arranged with a first pitch on the mask layer in a first region and dummy guides regularly arranged with the first pitch on the mask layer in a second region spaced apart from the first region with a separation region therebetween, the separation region having a width greater than the first pitch; forming a block copolymer layer on the mask layer; phase-separating the block copolymer layer to form a self-assembled layer; forming a mask pattern by etching the mask layer using the self-assembled layer; and patterning the feature layer by transferring a shape of the mask pattern to the feature layer in the first region while blocking the shape of the mask pattern from being transferred to the feature layer in the second region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming pattern and method of manufacturing integrated circuit device by using the same","description":"A method of forming a pattern, the method including forming a mask layer on a feature layer on a substrate; forming guides regularly arranged with a first pitch on the mask layer in a first region and","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9659790","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9659790","citation_suggestion":"Patentable. \"Method of forming pattern and method of manufacturing integrated circuit device by using the same\" (US-9659790). https://patentable.app/patents/US-9659790","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9659790","json":"https://patentable.app/api/llm-context/US-9659790","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:17:28.524Z"}