{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9659818","patent":{"patent_number":"US-9659818","title":"Forming self-aligned dual patterning mandrel and non-mandrel interconnects","assignee":null,"inventors":[],"filing_date":"2016-10-28T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for forming conductive lines on a substrate includes depositing a layer of mandrel material on a substrate and removing portions of the layer of mandrel material to form a first mandrel having a first length, a portion of the first mandrel has sloped sidewalls, a second mandrel having a second length, the second mandrel having an outwardly facing sloped sidewall, and a third mandrel having the second length, the third mandrel having an outwardly facing sloped sidewall, the first length is greater than the second length, the first mandrel is arranged between the second mandrel and the third mandrel. A spacer is formed along non-sloped sidewalls of the first mandrel, the second mandrel, and the third mandrel. The first mandrel, the second mandrel, and the third, mandrel, and exposed portions of the substrate are removed to form cavities. The cavities are filled with a conductive material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Forming self-aligned dual patterning mandrel and non-mandrel interconnects","description":"A method for forming conductive lines on a substrate includes depositing a layer of mandrel material on a substrate and removing portions of the layer of mandrel material to form a first mandrel havin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9659818","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9659818","citation_suggestion":"Patentable. \"Forming self-aligned dual patterning mandrel and non-mandrel interconnects\" (US-9659818). https://patentable.app/patents/US-9659818","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9659818","json":"https://patentable.app/api/llm-context/US-9659818","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:47:47.316Z"}