{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9659819","patent":{"patent_number":"US-9659819","title":"Interconnects for stacked non-volatile memory device and method","assignee":null,"inventors":[],"filing_date":"2013-02-11T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of forming a memory device includes providing a substrate having a surface region, defining a cell region and first and second peripheral regions, sequentially forming a first dielectric material, a first wiring structure for a first array of devices, and a second dielectric material over the surface region, forming an opening region in the first peripheral region, the opening region extending in a portion of at least the first and second dielectric materials to expose portions of the first wiring structure and the substrate, forming a second wiring material that is overlying the second dielectric material and fills the opening region to form a vertical interconnect structure in the first peripheral region, and forming a second wiring structure from the second wiring material for a second array of devices, the first and second wiring structures being separated from each other and electrically connected by the vertical interconnect structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Interconnects for stacked non-volatile memory device and method","description":"A method of forming a memory device includes providing a substrate having a surface region, defining a cell region and first and second peripheral regions, sequentially forming a first dielectric mate","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9659819","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9659819","citation_suggestion":"Patentable. \"Interconnects for stacked non-volatile memory device and method\" (US-9659819). https://patentable.app/patents/US-9659819","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9659819","json":"https://patentable.app/api/llm-context/US-9659819","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:21:41.991Z"}