{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9659823","patent":{"patent_number":"US-9659823","title":"Highly scaled tunnel FET with tight pitch and method to fabricate same","assignee":null,"inventors":[],"filing_date":"2016-03-15T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":13,"abstract":"A structure includes a substrate and a tunnel field effect transistor (TFET). The TFET includes a source region disposed in the substrate having an overlying source contact, the source region containing first semiconductor material having a first doping type; a drain region disposed in the substrate having an overlying drain contact, the drain region containing second semiconductor material having a second, opposite doping type; and a gate structure that overlies a channel region between the source and the drain. The source region and the drain region are asymmetric with respect to one another such that one contains a larger volume of semiconductor material than the other one. A method is disclosed to fabricate a plurality of the TFETs using a plurality of spaced apart mandrels having spacers. A pair of the mandrels and the associated spacers is processed to form four adjacent TFETs without requiring intervening lithographic processes."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Highly scaled tunnel FET with tight pitch and method to fabricate same","description":"A structure includes a substrate and a tunnel field effect transistor (TFET). The TFET includes a source region disposed in the substrate having an overlying source contact, the source region containi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9659823","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9659823","citation_suggestion":"Patentable. \"Highly scaled tunnel FET with tight pitch and method to fabricate same\" (US-9659823). https://patentable.app/patents/US-9659823","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9659823","json":"https://patentable.app/api/llm-context/US-9659823","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:22:12.415Z"}