{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9659826","patent":{"patent_number":"US-9659826","title":"Asymmetric source/drain depths","assignee":null,"inventors":[],"filing_date":"2016-12-05T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A method for fabricating a semiconductor device includes forming a relaxed semiconductor layer on a substrate, the substrate comprising an n-type region and a p-type region. The method further includes forming a tensile strained semiconductor layer on the relaxed semiconductor layer, etching a portion of the tensile strained semiconductor layer in the p-type region, forming a compressive strained semiconductor layer on the tensile strained semiconductor layer in the p-type region, forming a first gate in the n-type region and a second gate in the p-type region, and forming a first set of source/drain features adjacent to the first gate and a second set of source/drain features adjacent to the second gate. The second set of source/drain features are deeper than the first set of source/drain features."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Asymmetric source/drain depths","description":"A method for fabricating a semiconductor device includes forming a relaxed semiconductor layer on a substrate, the substrate comprising an n-type region and a p-type region. The method further include","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9659826","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9659826","citation_suggestion":"Patentable. \"Asymmetric source/drain depths\" (US-9659826). https://patentable.app/patents/US-9659826","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9659826","json":"https://patentable.app/api/llm-context/US-9659826","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:31:47.652Z"}