{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9659840","patent":{"patent_number":"US-9659840","title":"Process flow for a combined CA and TSV oxide deposition","assignee":null,"inventors":[],"filing_date":"2014-02-21T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A method of forming a TSV isolation layer and a transistor-to-BEOL isolation layer during a single deposition process and the resulting device are disclosed. Embodiments include providing a gate stack, with source/drain regions at opposite sides thereof, and an STI layer on a silicon substrate; forming a TSV trench, laterally separated from the gate stack, through the STI layer and the silicon substrate; forming an isolation layer on sidewalls and a bottom surface of the TSV trench and over the gate stack, the STI layer, and the silicon substrate; forming a TSV in the TSV trench; forming a dielectric cap over the isolation layer and the TSV; and forming a source/drain contact through the dielectric cap and the isolation layer down to the source/drain contract regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Process flow for a combined CA and TSV oxide deposition","description":"A method of forming a TSV isolation layer and a transistor-to-BEOL isolation layer during a single deposition process and the resulting device are disclosed. Embodiments include providing a gate stack","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9659840","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9659840","citation_suggestion":"Patentable. \"Process flow for a combined CA and TSV oxide deposition\" (US-9659840). https://patentable.app/patents/US-9659840","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9659840","json":"https://patentable.app/api/llm-context/US-9659840","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:04:49.390Z"}