{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9659864","patent":{"patent_number":"US-9659864","title":"Method and apparatus for forming self-aligned via with selectively deposited etching stop layer","assignee":null,"inventors":[],"filing_date":"2015-10-20T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A layer of an interconnect structure is formed over a substrate. The layer contains an interlayer dielectric (ILD) material and a metal line disposed in the ILD. A first etching stop layer is formed on the ILD but not on the metal line. The first etching stop layer is formed through a selective atomic layer deposition (ALD) process. A second etching stop layer is formed over the first etching stop layer. A high etching selectivity exists between the first and second etching stop layers. A via is formed to be at least partially aligned with, and electrically coupled to, the metal line. The first etching stop layer prevents the ILD from being etched through during the formation of the via."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method and apparatus for forming self-aligned via with selectively deposited etching stop layer","description":"A layer of an interconnect structure is formed over a substrate. The layer contains an interlayer dielectric (ILD) material and a metal line disposed in the ILD. A first etching stop layer is formed o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9659864","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9659864","citation_suggestion":"Patentable. \"Method and apparatus for forming self-aligned via with selectively deposited etching stop layer\" (US-9659864). https://patentable.app/patents/US-9659864","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9659864","json":"https://patentable.app/api/llm-context/US-9659864","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:02:55.420Z"}