{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9659955","patent":{"patent_number":"US-9659955","title":"Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structure","assignee":null,"inventors":[],"filing_date":"2015-10-28T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A method of forming a device includes forming an alternating stack of insulating layers and sacrificial material layers over a substrate, forming a memory opening extending through the alternating stack, and forming an aluminum oxide layer on sidewall surfaces of the sacrificial material layers and on sidewall surfaces of the insulating layers around the memory opening. First aluminum oxide portions of the aluminum oxide layer are located on sidewall surfaces of the sacrificial material layers, and second aluminum oxide portions of the aluminum oxide layer are located on sidewalls of the insulating layers. The method also includes removing the second aluminum oxide portions at a greater etch rate than the first aluminum oxide portions employing a selective etch process, such that all or a predominant portion of each first aluminum oxide portion remains after removal of the second aluminum oxide portions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structure","description":"A method of forming a device includes forming an alternating stack of insulating layers and sacrificial material layers over a substrate, forming a memory opening extending through the alternating sta","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9659955","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9659955","citation_suggestion":"Patentable. \"Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structure\" (US-9659955). https://patentable.app/patents/US-9659955","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9659955","json":"https://patentable.app/api/llm-context/US-9659955","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:38:15.952Z"}